实验室流化床CVD：1200℃真空气氛垂直管式炉

SGM 实验室流化床CVD是由洛阳西格马高温电炉生产的真空气氛垂直管式炉，为化学气相沉积法可控及批量制备碳纳米管设备。

SGM laboratory fluidized bed CVD is a vertical tube furnace with vacuum atmosphere produced by Luoyang sigma high temperature electric furnace. It is a controllable and batch preparation equipment of carbon nanotubes by chemical vapor deposition.

西格马 三温区立式管式炉

实验室流化床CVD设备包括有：自动加液装置、超声波雾化发生装置、气体供应装置、气体流量控制装置、流化床反应器及加热装置、旋风分离器、固体收集装置、净化处理装置。气体供应装置出气口在经过气体流量控制装置后与超声波雾化装置进气口相连接，自动加液装置出液口与超声波雾化发生装置进液口相连接，通过雾化装置内部的液体控制装置来控制加液。超声波雾化装置的出口与三温区流化床反应器的进料口相连接，反应器的出料口通过透明管与旋风分离器相连接，旋风分离器上面的气体出口与净化处理装置相连接，下面的固体捕集出口与固体收集器相连接。经过旋风分离器后，大量的气体向上通过净化装置后排向大气，而固体则捕集到固体收集装置中。碳纳米管生长*难控制的就是气场和流场温度差异相互影响，由于变量太多，无法确保生长的碳纳米管形态一致，从而质量质量非常低，可解决气场和流场及温度变量的相互影响。

The laboratory fluidized bed CVD equipment includes: automatic liquid feeding device, ultrasonic atomization generator, gas supply device, gas flow control device, fluidized bed reactor and heating device, cyclone separator, solid collection device and purification treatment device. After passing through the gas flow control device, the gas outlet of the gas supply device is connected with the air inlet of the ultrasonic atomization device, and the liquid outlet of the automatic liquid feeding device is connected with the liquid inlet of the ultrasonic atomization generating device, and the liquid feeding is controlled by the liquid control device inside the atomization device. The outlet of the ultrasonic atomization device is connected with the feed inlet of the three temperature zone fluidized bed reactor, the outlet of the reactor is connected with the cyclone separator through a transparent tube, the gas outlet above the cyclone separator is connected with the purification treatment device, and the solid capture outlet below is connected with the solid collector. After the cyclone separator, a large amount of gas upward through the purification device back to the atmosphere, and the solid is captured in the solid collection device. The most difficult thing to control the growth of carbon nanotubes is the interaction of temperature difference between gas field and flow field. Because of too many variables, it is impossible to ensure that the morphology of carbon nanotubes is consistent, so the quality of carbon nanotubes is very low.

可通过流量计和静态混气室把气体均匀混拌，通过上通气，气体通过双层管(夹层管预热气体，内腔体生长碳纳米管)确保通入的气体进入生长腔体内温度一直，通过多空陶瓷网的结构设计，从而解决均匀进气的问题。使的生长腔体热场流场稳定，确保得到高质量重复性好的碳纳米管。(另配一台加热雾化装置，一个氢气报警器)

The gas can be evenly mixed through a flowmeter and a static air mixing chamber. Through the upper ventilation, the gas passes through the double-layer tube (the sandwich tube preheates the gas, and the carbon nanotubes grow in the inner cavity) to ensure the temperature of the gas entering the growth chamber. Through the structural design of multi space ceramic mesh, the problem of uniform air intake can be solved. The results show that the thermal field flow field of the growth chamber is stable, and the carbon nanotubes with high quality and good repeatability are obtained. (equipped with a heating atomization device and a hydrogen alarm)

实验室流化床CVD主要技术参数：

1、电炉名称：实验室流化床CVD

2、炉管材质：高纯石英管

3、炉管尺寸：OD: 80 mm (外管)，OD 50mm(内管)

4、加热元件：首钢、康奈尔电阻丝

5、工作温度：连续工作温度：≤1100℃

6、温控系统：30段可编程控温，PID参数自整定，操作界面为7"液晶触摸屏控制

7、控温精度：±1℃

8、加热区长度：600mm

9、恒温区长度：400mm

10、供气系统：内部装有3路高精度质量流量计可准确的控制气体流量；设静态混气室，有助于气体充分混合，按要求配比。

1）流量计标准量程：100sccm，200sccm，200sccm，500sccm(非特殊以氮气标定，量程可选)

2）工作温度：5~45℃

3）工作压差：0.1~0.5MPa

4）压力：3MPa

5）准确度：±1.5% FS

6）测量范围：-0.1~0.15 MPa(0.01 MPa/grid)

7）针阀：316不锈钢

8）混气罐：Φ80×120mm

9）截止阀：Φ6mm”316不锈钢针阀

10）尺寸：600×600×650 mm

SiC包覆层是高温气冷堆核燃料元件TRISO包覆颗粒*关键的一层。制备细晶SiC包覆层对阻挡裂变产物释放、提高SiC包覆层承压能力等具有重要意义。

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