B1542A 10 ns 脉冲 IV 参数测试解决方案

主要特性与技术指标

适用于 高 k/SOI 脉冲 IV 表征的解决方案

精确的 Id-Vd 和 Id-Vg 测量

选通脉宽最小值是 10 ns，上升和下降时间为 2 ns

1 µs 电流测量分辨率

在直流测量和脉冲测量之间轻松切换

支持的分析仪：B1500A、E5270B、E5260A、E5262A、E5263A、4155/56C 和 4155/56B

描述

脉冲 IV 参数测试逐渐成为进行半导体制程开发和半导体器件测试的一项常见要求。最近几年，在更制程不断发展的推动下，用户对精确脉冲 IV 测量的需求不断增加。为了满足这些需求，是德科技推出了多种脉冲 IV 参数测试解决方案。它们提供更广泛的脉宽、电压/电流输出和性能。

Keysight B1542A 10 ns 脉冲 IV 参数测试解决方案的脉宽范围是 10 ns 至 1 ms，非常适合对采用高 k 栅介质材料构成的 MOSFET 或在 SOI 晶圆上装配的 MOSFET 进行表征。该脉冲 IV 解决方案允许您使用脉宽为 10 ns、上升和下降时间为 2 ns 的脉冲信号（速度非常快），且信号的过冲和下冲非常低。

Main features and technical indicators

Optimal solution for high k/SOI pulse IV characterization

Accurate measurements of id-vd and id-vg

The minimum gate pulse width is 10 ns, and the rise and fall time is 2 ns

1 s current measurement resolution

Easy switching between dc measurement and pulse measurement

Supported analyzers: B1500A, E5270B, E5260A, E5262A, E5263A, 4155/56c and 4155/56b

describe

Pulse IV parameter testing is becoming a common requirement for semiconductor process development and semiconductor device testing. In recent years, the need for accurate pulse IV measurements has increased, driven by the development of more advanced processes. In order to meet these requirements, SDT has launched a variety of pulse IV parameter testing solutions. They provide a wider range of pulse widths, voltage/current outputs, and performance.

Keysight B1542A 10 ns pulse IV parameter test solution has a pulse width range of 10 ns to 1 ms, which is very suitable for the characterization of MOSFET made of high-k gate dielectric material or MOSFET assembled on SOI wafer. The pulse IV solution allows you to use pulses with a pulse width of 10 ns, a rise and fall time of 2 ns (very fast), and very low overshoot and downshoot of the signal.